Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Full Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 125 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 500 W
Package / Case: Econo 3
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 17 mm
Length: 121.5 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Subcategory: IGBTs
Technology: Si
Width: 61.5 mm
Part # Aliases: SP000100357 BSM75GD120DLCBOSA1
Unit Weight: 329.138 g
