Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 200 A DC-collector current TC = 25 °C IC 420 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 400 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 1,3 kW Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES +/- 20V V Dauergleichstrom DC forward current IF 200 A Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms IFRM 400 A Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t - kA2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung IC = 200A, VGE = 15V, Tvj = 25°C VCE sat- 2,1 2,6 V collector-emitter saturation voltage IC = 200A, VGE = 15V, Tvj = 125°C - 2,4 V Gate-Schwellenspannung gate threshold voltage IC = 8mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V Gateladung gate charge VGE = -15V...+15V QG---µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies- 13- nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres--- nF Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES- 0,02 0,5 mA collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 0,5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES-- 400 nA
